Superconductivity mediated by the antiferromagnetic spin-wave in chalcogenide iron-base superconductors

The ground state of K$_{0.8+x}$Fe$_{1.6+y}$Se$_2$ and other iron-based selenide superconductors are doped antiferromagnetic semiconductors. There are well defined iron local moments whose energies are separated from those of conduction electrons by a large band gap in these materials. We propose that the low energy physics of this system is governed by a model Hamiltonian of interacting electrons with on-site ferromagnetic exchange interactions and inter-site superexchange interactions. We have derived the effective pairing potential of electrons under the linear spin-wave approximation and shown that the superconductivity can be driven by mediating coherent spin wave excitations in these materials. Our work provides a natural account for the coexistence of superconducting and antiferromagnetic long range orders observed by neutron scattering and other experiments.Comment: 4 pages, 3 figure

Parallel processing architecture for computing inverse differential kinematic equations of the PUMA arm

In advanced robot control problems, on-line computation of inverse Jacobian solution is frequently required. Parallel processing architecture is an effective way to reduce computation time. A parallel processing architecture is developed for the inverse Jacobian (inverse differential kinematic equation) of the PUMA arm. The proposed pipeline/parallel algorithm can be inplemented on an IC chip using systolic linear arrays. This implementation requires 27 processing cells and 25 time units. Computation time is thus significantly reduced

Metallic behaviour of carrier-polarized C60_{60} molecular layers: Experiment and Theory

Although C$_{60}$ is a molecular crystal with a bandgap E$_g$ of ~2.5 eV, we show that E$_g$ is strongly affected by injected charge. In sharp contrast to the Coulomb blockade typical of quantum dots, E$_g$ is {\it reduced} by the Coulomb effects. The conductance of a thin C$_{60}$ layer sandwiched between metal (Al, Ag, Au, Mg and Pt) contacts is investigated. Excellent Ohmic conductance is observed for Al electrodes protected with ultra-thin LiF layers. First-principles calculations, Hubbard models etc., show that the energy gap of C$_{60}$ is dramatically reduced when electrons hop from C$_{60}^-$ to C$_{60}$.Comment: 4 PRL style pages, 2 figures. email: [email protected]

Molecular electronics exploiting sharp structure in the electrode density-of-states. Negative differential resistance and Resonant Tunneling in a poled molecular layer on Al/LiF electrodes

Density-functional calculations are used to clarify the role of an ultrathin LiF layer on Al electrodes used in molecular electronics. The LiF layer creates a sharp density of states (DOS), as in a scanning-tunneling microscope (STM) tip. The sharp DOS, coupled with the DOS of the molecule leads to negative differential resistance (NDR). Electron transfer between oriented molecules occurs via resonant tunneling. The I-V characteristic for a thin-film of tris (8-hydroxyquinoline)- aluminum (AlQ) molecules, oriented using electric-field poling, and sandwiched between two Al/LiF electrodes is in excellent agreement with theory. This molecular device presents a new paradigm for a convenient, robust, inexpensive alternative to STM or mechanical break-junction structures.Comment: 5 pages, 3 figure